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Dividend Vision

ETF Comparison

SOXX vs DRAM: Broad Semiconductors, or Memory Chips?

A head-to-head of iShares Semiconductor and Roundhill Memory covering industry breadth versus a memory sleeve.

Data updated September 18, 2026

Visual comparison

Key metrics

Projected income on $10K

Projections assume the current yield and share price remain constant. Actual results will vary.

Total returns

100% reinvested · ex-date convention. Period returns use this fixed assumption, independent of chart settings.

DRAM has outpaced SOXX over the shared window since Apr 2026, posting a 114.73% total return against 57.14%. SOXX has been the steadier holding, though — annualized volatility of 55.6% against 91.3% for DRAM. Figures are total returns: price change plus every distribution reinvested.

Total return and risk statistics by fund. Each row is one fund; each column is one period or statistic.
SymbolSince Apr 2026Volatility Sharpe Sortino Max drawdown
DRAM114.73%91.3%1.772.64-44.4%
SOXX57.14%55.6%1.682.42-29.0%

Total return with all distributions reinvested on the ex-dividend date (a modeling convention, not the cash-settlement date), split-adjusted, as of September 18, 2026. YTD and 1Y are cumulative; windows of one year or longer are annualized. “Since Apr 2026” measures every fund from April 2, 2026 — the start of shared available history — so all funds share one comparison window. Volatility is the annualized standard deviation of daily total returns over the shared window since Apr 2026. Sharpe and Sortino divide the annualized return in excess of the risk-free rate by, respectively, that volatility and the downside deviation (both over the shared window since Apr 2026) — higher is better. Max drawdown is the largest peak-to-trough total-return decline over the same window — shallower is better.

Side-by-side snapshot

Side-by-side snapshot. Each row is one metric; each column is one fund.
MetricDRAMSOXX
Full nameRoundhill Memory ETFiShares Semiconductor ETF
IssuerRoundhill InvestmentsiShares
Last Close$59.61 as of September 18, 2026$533.07 as of September 18, 2026
Distribution rate0.24%
Distribution Safety Score™ 66
Safety-Adjusted Yield 0.16%
Expense ratio0.65%0.33%
AUM$25.9B$42.3B
Distribution frequencyNoneQuarterly
Underlying indexICE Semiconductor Index
ObjectiveSeeks capital appreciation by investing at least 80% of net assets in the equity securities of memory companies, or in swaps and forward contracts that provide equivalent exposure.Tracks the ICE Semiconductor Index of US-listed semiconductor companies.
Asset classEquityEquity
Inception date04/02/202607/10/2001
Beta2.33
Last dividend$0.325 payable today
Ex-dividend date09/15/2026

— Distribution rate, Safety-Adjusted Yield, last dividend, and ex-dividend date are not yet available because DRAM launched April 2026; these fields will populate after the first distribution.

Bottom lineWe won't call this one: DRAM launched April 2026, so there is not yet a track record to compare. Compare the strategy, cost and holdings in the sections above and treat any performance figures for the newer ETF as provisional. What is already clear from the numbers above: the two do not cost the same — SOXX charges 0.33% against 0.65% for DRAM, and on funds tracking the same thing that gap compounds every year you hold.

Memory chips versus a broad semiconductor book

DRAM concentrates on memory. SOXX holds the broader semiconductor industry. Sleeve versus industry is the split.

DRAMSOXX
ScopeMemory-chip sleeveBroad semiconductors
Expense ratio0.65%0.33%
Fund size$25.9B$42.3B

Income calculator

See how much monthly income a hypothetical investment would generate in each ETF at current yields.

ETFs56
Total AUM$37.3B

ETFs and AUM reflect what Dividend Vision tracks — the issuer's full lineup may be larger.

Roundhill Investments is known for offering innovative, specialized ETFs that often feature weekly dividend distributions and exposure to trending themes and individual mega-cap stocks. Their lineup spans income-focused strategies, leveraged products, thematic investments in areas like cryptocurrency and artificial intelligence, and weekly-pay funds that appeal to investors seeking frequent distributions. The issuer has built a distinctive niche with products targeting both traditional income seekers and those interested in emerging sectors, offering a diverse range of tickers that go well beyond conventional dividend vehicles.

See our curated list of related YouTube videos on DRAM.

ETFs466
Total AUM$4551B

ETFs and AUM reflect what Dividend Vision tracks — the issuer's full lineup may be larger.

iShares is one of the largest ETF providers globally, known for offering a broad, diversified lineup of exchange-traded funds across multiple asset classes and investment strategies. The company operates 215 funds spanning 15 distinct families, including popular offerings in dividend income, covered call strategies, bonds, equities, ESG-focused investments, and factor-based approaches, with widely-held tickers like AGG (bond), ACWI (global equity), and AOA (allocation). iShares is characterized by its comprehensive fund ecosystem that serves both core portfolio holdings and specialized investment strategies, making it a prominent player for investors seeking both traditional and alternative income-generating ETF solutions.

See our curated list of related YouTube videos on SOXX.

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Quick verdict

DRAM (Roundhill Memory ETF) and SOXX (iShares Semiconductor ETF) are both ETFs, but they take different approaches.

SOXX currently shows a 0.24% distribution yield. DRAM has not yet established a full distribution history, so a comparable yield figure is not available.

SOXX is cheaper with an expense ratio of 0.33% compared to 0.65%.

SOXX has $42.3B in assets vs $25.9B for DRAM, but DRAM only launched April 2026 — AUM comparisons will become more meaningful as it builds a track record.

Deep dive

Yield & income

On a $10,000 investment, DRAM has no reported distribution yield yet, so a monthly income estimate is not available, while SOXX would produce $2.00/month, at current distribution rates.

DRAM yield
SOXX yield0.24%

Cost & efficiency

Over 10 years on $10,000, DRAM would cost approximately $650 in fees vs $330 for SOXX (simplified, not compounded). The $320.00 difference may be offset by yield or performance.

DRAM ER0.65%
SOXX ER0.33%

Strategy & risk

DRAM is an ETF built around a thematic strategy, while SOXX tracks ICE Semiconductor Index.

DRAM beta
SOXX beta2.33

Fund details

DRAM is managed by Roundhill Investments (launched 04/02/2026) with $25.9B in assets. SOXX is managed by iShares (launched 07/10/2001) with $42.3B in assets.

DRAM AUM$25.9B
SOXX AUM$42.3B

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Frequently asked questions

What is the difference between DRAM and SOXX?

DRAM (Roundhill Memory ETF) concentrates on memory-chip names. SOXX (iShares Semiconductor ETF) is a broad semiconductor ETF. Memory sleeve versus the full industry is the split. Cost is 0.65% versus 0.33%; size is $25.9B versus $42.3B. Distributions are — and 0.24% as of September 2026.

Which of DRAM or SOXX pays more dividend income?

SOXX currently reports a distribution yield, while DRAM has not yet established a full distribution history. A direct income comparison is not yet meaningful — check back once both funds have published several consecutive distributions.

Can I hold both DRAM and SOXX?

Yes — nothing prevents holding both. Whether the combination actually diversifies depends on how much the underlying exposures overlap, which isn't fully measurable from the data on this page; review each security's holdings, sector, and strategy before treating them as complementary.

Which has lower fees, DRAM or SOXX?

DRAM has an expense ratio of 0.65% while SOXX charges 0.33%. Lower fees mean more of your investment returns stay in your pocket over time.

How much income does $10,000 in DRAM vs SOXX generate?

At current rates, DRAM has not established a distribution history yet, so a monthly income estimate is not available. The same in SOXX would produce about $2.00 per month ($24.00 annually).

Which has performed better historically, DRAM or SOXX?

DRAM has outpaced SOXX over the shared window since Apr 2026, posting a 114.73% total return against 57.14%. SOXX has been the steadier holding, though — annualized volatility of 55.6% against 91.3% for DRAM. Figures are total returns: price change plus every distribution reinvested. Past performance does not guarantee future results.

More comparisons to explore

DRAM vs SOXX — at a glance

Generated September 20, 2026.

Overview

DRAM and SOXX are both technology-focused equity ETFs with semiconductor exposure, but they pursue fundamentally different strategies. DRAM is a thematic ETF concentrating on memory chip companies using active management and derivatives, while SOXX is a broad semiconductor index tracker covering the entire semiconductor supply chain. The key distinction is scope: DRAM bets on a narrow subsector; SOXX diversifies across design, manufacturing, and specialty chips.

How they differ

DRAM targets memory semiconductors exclusively—DRAM, NAND flash, and related components—while SOXX tracks the full ICE Semiconductor Index, which includes logic, analog, mixed-signal, and equipment makers alongside memory. This is the foundational strategic difference: DRAM's concentrated thematic bet versus SOXX's diversified sector coverage. SOXX's fund inception traces to 07/10/2001, spanning multiple decades, while DRAM began 04/02/2026. SOXX publishes a beta of 2.33, indicating elevated volatility relative to the broader market.

SOXX: Designed for investors wanting diversified semiconductor exposure across the full value chain with lower fees and a modest quarterly dividend; aligns with buy-and-hold strategies in the semiconductor sector without the concentration risk of a single end-market.

Key risks to know

  • Subsector concentration: DRAM's focus on memory chips means it carries outsized exposure to cyclical demand swings in DRAM and NAND markets, which can diverge sharply from broader chip cycles. If memory oversupply emerges while logic or analog segments thrive, DRAM's performance may lag SOXX significantly.
  • Active management and derivatives risk: DRAM uses swaps and forward contracts to gain memory exposure, introducing counterparty and basis risk not present in SOXX's passive index approach. Active trading also creates potential tax inefficiency and unpredictable tracking error relative to memory subsector benchmarks.
  • Unproven resilience through cycles: DRAM's recent inception means it has not yet demonstrated performance across a full business cycle or semiconductor downturn. SOXX's history spanning multiple decades provides a record of behavior in previous recessions; DRAM's trajectory through a cyclical trough remains untested.
  • Overlapping holdings risk: Both funds likely hold many of the same memory-oriented companies (e.g., Micron, SK Hynix positions in SOXX's semiconductor index). Investors considering both should verify holdings overlap before assuming portfolio diversification.
  • Relative valuation and tracking divergence: DRAM's memory-only thesis and active management may produce tracking patterns different from underlying memory subsector benchmarks; SOXX, as a large-cap index tracker, typically tracks its underlying index closely. Widening or narrowing valuation gaps between memory and the broader semiconductor index would affect relative performance.

Bottom line

If you seek targeted exposure to memory semiconductors and accept concentration risk plus an unproven track record, DRAM's thematic focus offers a direct lever on that bet. If you prefer diversified semiconductor exposure, lower fees, a dividend, and a longer performance history across market cycles, SOXX's index approach provides breadth and lower operating costs. Your choice hinges on conviction in memory outperformance versus preference for passive, full-sector coverage. Past performance does not guarantee future results.

AI-generated analysis for educational purposes only. Verify important details independently; past performance does not guarantee future results.

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The metrics behind this comparison, explained in the Academy.

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